This experiment involves depositing a silver film on a glass substrate and transforming it into a silver sulfide film with memristor characteristics using chemical vapor deposition (CVD) techniques. We used scanning electron microscopy (SEM) and X-ray diffraction (XRD) to examine the film's surface growth quality and crystal structure. Measurements of the current-voltage (I-V) characteristics showed that Ag2S films exhibit memristive effects and can form n-Ag2S/p-silicon diodes. Ongoing photoconductivity measurements indicate that the sample demonstrates good performance under specific frequency conditions.
